An enhanced model for InGaP/GaAs heterojunction bipolar transistor

The model parameter extraction and simulation for the effects of gamma irradiation on the DC characteristics of InGaP/GaAs single heterojunction bipolar transistors

In this article, we report the effect of gamma irradiation on the DC characteristics of InGaP/GaAs single heterojunction bipolar transistors (SHBTs) based on the simulation with the extracted model parameters from experiment data before irradiation, after irradiation and after annealing. A simplified Vertical Bipolar Inter-Company (VBIC) static model is proposed to study the operational mechani...

Thermal stability of current gain in InGaP/GaAsSb/GaAs double-heterojunction bipolar transistors

High Uniformity 6” InGaP/GaAs Heterojunction Bipolar Transistors

The growth of highly uniform, state-of-the-art InGaP/GaAs heterojunction bipolar transistors is demonstrated in a multi-wafer 6-inch configuration (AIX 2600). The uniformity of thickness, doping, composition, interface properties and minority carrier lifetime are assessed by electrical and structural characterization measurements, and shown to vary by less than ±3% across the wafer. The dc curr...

InGaP Makes HBT Reliability a Non-Issue

Among the many benefits InGaP brought to the GaAs-based heterojunction bipolar transistor (HBT) over the last few years, nothing is more profound than the drastic improvement it provided in the long-term reliability. Today, it is relatively common to obtain activation energies higher than 1.5eV with InGaP HBTs operating under bias and temperature conditions suitable for modern telecommunication...

Operation and device applications of a valved-phosphorus cracker in solid-source molecular-beam epitaxy

Solid phosphorus is successfully incorporated into a molecular-beam epitaxy system by a valved-cracker for the growth of phosphorus-based materials. The operating parameters are established through beam flux and reflection high-energy electron diffraction measurements. InP and InGaP lattice matched to GaAs were grown and characterized by Hall measurements, photoluminescence, electroreflectance,...